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AO4441 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4441 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4441 is Pb-free (meets ROHS & Sony 259 specifications). AO4441L is a Green Product ordering option. AO4441 and AO4441L are electrically identical.
Features
VDS (V) = -60V ID = -4 A (VGS = -10V) RDS(ON) < 100m (VGS = -10V) RDS(ON) < 130m (VGS = -4.5V)
SOIC-8 Top View S S S G D D D D
D
G S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum -60 20 -4 -3.1 -20 3.1 2 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 24 54 21
Max 40 75 30
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO4441
P-Channel Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-48V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-4A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-3A Forward Transconductance VDS=-5V, ID=-4A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C -1 -20 80 130 102 10 -0.77 -1 -4 930 VGS=0V, VDS=-30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 85 35 7.2 16 VGS=-10V, VDS=-30V, ID=-4A 8 2.5 3.2 8 VGS=-10V, VDS=-30V, RL=7.5, RGEN=3 IF=-4A, dI/dt=100A/s 3.8 31.5 7.5 27 32 35 9 20 10 1120 130 100 -2.1 Min -60 -1 -5 100 -3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/s
2
A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any ien application depends on on the user's specific board design. The current ratingbased on on the 10s thermal resistance given application depends the user's specific board design. The current rating is is based the t t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Rev 1: Sept 2005
Alpha & Omega Semiconductor, Ltd.
AO4441
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
20 -10V 15 -ID (A) -6.0V -4.5V -5.0V -4.0V 10 VDS=-5V 8 6 4 2 0 1 1.5 2 2.5 3 3.5 4 -VGS(Volts) Figure 2: Transfer Characteristics 2 Normalized On-Resistance VGS=-4.5V 100 RDS(ON) (m) 1.8 1.6 1.4 1.2 1 0.8 0 2 4 6 8 10 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=-10V ID=-4A
10
-3.5V
-ID(A)
5
125C 25C
VGS=-3.0V
0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics
110
90
VGS=-4.5V ID=-3A ID=-3A
80
VGS=-10V
70 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 180 160 RDS(ON) (m) 140 120 100 80 60 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 125C -IS (A) ID=-4A
1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C
25C
Alpha & Omega Semiconductor, Ltd.
AO4441
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
10 8 -VGS (Volts) 6 4 2 0 0 10 -Qg (nC) Figure 7: Gate-Charge Characteristics 20 VDS=-30V ID=-4A Capacitance (pF) 1000 1500
Ciss
500 Coss 0 0 10 20 30 40 50 60 -VDS (Volts) Figure 8: Capacitance Characteristics Crss
100.0
TJ(Max)=150C, TA=25C RDS(ON) limited
40
1ms 10ms 1.0 1s 10s 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC 0.1s
Power (W)
-ID (Amps)
10.0
100s
10s
30
TJ(Max)=150C TA=25C
20
10
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton T
0.01 0.00001
Single Pulse 0.0001 0.001 0.01 0.1 1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

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